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MJ13100 - NPN Transistor

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) MJ13100 = 450V(Min) MJ13101 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and re

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isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13100 = 450V(Min)—MJ13101 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT MJ13100 650 VCEV Collector-Emitter Voltage V MJ13101 750 MJ13100 400 VCEO(SUS) Collector-Emitter Voltage V MJ13101 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperat