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MJ13101 - NPN Transistor

Download the MJ13101 datasheet PDF. This datasheet also covers the MJ13100 variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) MJ13100 = 450V(Min) MJ13101 High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulators Inverters Solenoid and re

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Note: The manufacturer provides a single datasheet file (MJ13100-INCHANGE.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Inchange Semiconductor

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13100 = 450V(Min)—MJ13101 ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT MJ13100 650 VCEV Collector-Emitter Voltage V MJ13101 750 MJ13100 400 VCEO(SUS) Collector-Emitter Voltage V MJ13101 450 VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 20 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A IBM Base Current-Peak 15 A PC Collector Power Dissipation@TC=25℃ 175 W TJ Junction Temperat