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MJ15022 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Power Transistors MJ15022/15024.

General Description

·plement to Type PNP MJ15023/15025 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT MJ15022 350 VCBO Collector-Base Voltage V MJ15024 400 MJ15022 200 VCEO Collector-Emitter Voltage V MJ15024 250 VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous ICM Collector Current-Peak (1) IB Base Current-Continuous 16 A 30 A 5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle _ 10%.

MAX 0.70 UNIT ℃/W isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors MJ15022/15024 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter (1) Sustaining Voltage MJ15022 MJ15024 IC= 50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A;

MJ15022 Distributor