Datasheet4U Logo Datasheet4U.com

MJ15025 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

·plement to Type NPN MJ15024 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15025 APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -250 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A ICM Collector Current-Peak -30 A IB Base Current-Continuous -5 A PD Total Power Dissipation @TC=25℃ 250 W Tj Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.70 UNIT ℃/W (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle _ 10%.

isc website:.iscsemi.

1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJ15025 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCE(sat)-1 Collector-Emitter Saturation Voltage CONDITIONS IC= -50mA ;IB= 0 IC= -8A;

MJ15025 Distributor