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MJ15023 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistors.

General Description

·Complement to Type NPN MJ15022 ·Excellent Safe Operating Area ·High DC current Gain ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ15023 APPLICATIONS ·Designed for high power audio, disk head positioners and other linear applications ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -200 V VEBO IC ICM (1) IB PD Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Total Power Dissipation @TC=25℃ Junction Temperature Storage Temperature -5 V -16 A -30 A -5 A 250 W -65~200 ℃ -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.70 UNIT ℃/W (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle <10%.

isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistors MJ15023 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage (1) VCE(sat)-1 Collector-Emitter Saturation Voltage CONDITIONS IC= -50mA ;IB= 0 IC= -8A;

IB= -0.8A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -16A;

MJ15023 Distributor