Datasheet Details
| Part number | MJ15027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.01 KB |
| Description | PNP Transistor |
| Datasheet | MJ15027-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor.
| Part number | MJ15027 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 200.01 KB |
| Description | PNP Transistor |
| Datasheet | MJ15027-INCHANGE.pdf |
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·High current capability ·High power dissipation ·Complement to the NPN MJ15026 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio power amplifier ·DC to DC converter ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -16 A PD Total Power Dissipation@TC=25℃ 250 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -50~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.608 ℃/W MJ15027 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -10mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -10A;
IB= -1A ICBO Collector Cutoff Current VCB= -100V;
IE=0 IEBO Emitter Cutoff Current VEB=- 5V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ15027 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| MJ15020 | NPN Transistor |
| MJ15021 | PNP Transistor |
| MJ15022 | NPN Transistor |
| MJ15023 | PNP Transistor |
| MJ15024 | NPN Transistor |
| MJ15024G | NPN Transistor |
| MJ15025 | PNP Transistor |
| MJ15026 | NPN Transistor |
| MJ15001 | NPN Transistor |
| MJ15002 | PNP Transistor |