Datasheet Details
| Part number | MJ16002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.61 KB |
| Description | NPN Transistor |
| Datasheet | MJ16002-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor MJ16002.
| Part number | MJ16002 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.61 KB |
| Description | NPN Transistor |
| Datasheet | MJ16002-INCHANGE.pdf |
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·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJ16002A | Silicon NPN Power Transistor | Inchange Semiconductor |
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