Datasheet Details
| Part number | MJ16004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.98 KB |
| Description | NPN Transistor |
| Datasheet | MJ16004-INCHANGE.pdf |
|
|
Overview: isc Silicon NPN Power Transistor MJ16004.
| Part number | MJ16004 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 202.98 KB |
| Description | NPN Transistor |
| Datasheet | MJ16004-INCHANGE.pdf |
|
|
|
·Fast turn-off times ·Operating temperature range -65~200℃ ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector- Base Voltage 850 V VCEO(SUS) Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature -65~200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.4 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS)* Collector-Emitter Sustaining Voltage IC=100mA ;
IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1.5A;
IB= 0.15A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 3A;
| Part Number | Description |
|---|---|
| MJ16002 | NPN Transistor |
| MJ16006 | NPN Transistor |
| MJ16008 | NPN Transistor |
| MJ16010 | NPN Transistor |
| MJ16012 | NPN Transistor |
| MJ16014 | NPN Transistor |
| MJ16016 | NPN Transistor |
| MJ16018 | NPN Transistor |
| MJ1000 | NPN Transistor |
| MJ10002 | NPN Transistor |