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MJ4034 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor.

General Description

·With TO-3 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Electronic ignition ·Alternator regulator ·Motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO VEBO IC ICM IB PD Tj Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Max.Collector Current-Continuous Base Current- Continuous Collector Power Dissipation Max.Junction Temperature 80 V 80 V 5 V 15 A 20 A 0.5 A 150 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 1.17 ℃/W isc website: www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor MJ4034 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 10A ,IB=40mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 16A ,IB= 80mA VBE(on) Base-Emitter Saturation Voltage IC= 10A ,VCE= 3.0V ICEO Collector Cutoff Current VCE= 40V, IB= 0 IEBO Emitter Cutoff Current VEB= 5V;

IC= 0 hFE-1 DC Current Gain IC= 10A ;

VCE=3V MIN MAX UNIT 80 V 2.5 V 4.0 V 3.0 V 3.0 mA 5.0 mA 1000 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.

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