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MJ4030 - Silicon PNP Darlingtion Power Transistor

General Description

With TO-3 package Respectively complement to type MJ4035 DARLINGTON High DC current gain APPLICATIONS

For use as output devices in complementary general purpose amplifier applications.

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor DESCRIPTION ·With TO-3 package ·Respectively complement to type MJ4035 ·DARLINGTON ·High DC current gain APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL VCBO VCEO VEBO IC IB B MJ4030 PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation@TC=25℃ Junction Temperature Storage Temperature VALUE -60 -60 -5 -16 http://www.DataSheet4U.net/ UNIT V V V A A W ℃ ℃ -0.5 150 200 -55~200 PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 1.17 UNIT ℃/W isc Website：www.iscsemi.