Lead formed for surface mount applications(NO suffix)
Electrically the same as TIP31 series
Pb-free package are available
100% avalanche tested
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
General purpose amplifier and
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
MJB31C
DESCRIPTION ·Lead formed for surface mount applications(NO suffix) ·Electrically the same as TIP31 series ·Pb-free package are available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·General purpose amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICP
Collector Current-Pulse
10
A
IB
Base Current
PC
Total Power Dissipation @ Ta=25℃
PC
Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
2
A
2
W
65
W
-65~150 ℃
Tstg
Storage Temp
MJB31C Datasheet
