Inchange Semiconductor MJB45H11
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJB45H11 |
|---|---|
| Datasheet | MJB45H11 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | Silicon PNP Power Transistor |
| Buy | Stock & Price |
DESCRIPTION
●Low Collector-Emitter saturation voltage●Pb-free package are available
●Fast switching speed
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●General purpose amplification and switching such as out or driver stages in applications such as switching regulators,converters and power amplifiersABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICP Collector Current-Pulse PC Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -20 A 2 W 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ MJB45H11 isc website： 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJB45H11ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=- 30mA; IB= 0 VCE(sat) VBE(sat) ICEO Collector-Emit...