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MJB45H11 Datasheet PDF

onsemi MJB45H11

PNP Transistor

Part No. MJB45H11
Datasheet MJB45H11 Download
Manufacturer
onsemi
Description PNP Transistor
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MJB45H11 datasheet page 1 preview

FEATURES

● Low Collector−Emitter Saturation Voltage − VCE(sat) = 1.0 V (Max) @ 8.0 A
● Fast Switching Speeds
● Complementary Pairs Simplifies Designs
● Epoxy Meets UL 94 V−0 @ 0.125 in
● ESD Ratings: Human Body Model, 3B > 8000 V Machine Model, C > 400 V
● NJV Prefix for Automotive and Other

APPLICATIONS

Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
● Pb−Free Packages are Available

MAXIMUM RATINGS

Rating Collector−Emitter Voltage Emitter−Base Voltage Collector Current − Continuous − Peak Symbol VCEO VEB IC Value 80 5 10 20 Unit Vdc Vdc Adc Total Power Dissipation @ TC = 25°C Derate above 25°C PD 50 W 0.4 W/°C Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range PD TJ, Tstg 2.0 0.016 −55 to 150 W W/°C °C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Case RqJC 2.5 °C/W Thermal Resistance, Junction−to−Ambient RqJA 75 °C/W Stresses exceeding

MAXIMUM RATINGS

may damage the device.
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