MJD200 datasheet by Inchange Semiconductor.
| Part number | MJD200 |
|---|---|
| Datasheet | MJD200-INCHANGE.pdf |
| File Size | 203.01 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·plement to the PNP MJD210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD200 TC =25℃ unless otherwise...
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJD200 | Complementary Plastic Power Transistors | ON |
 |
MJD200 | D-PAK | Fairchild |
 |
MJD200 | SILICON POWER TRANSISTORS | Motorola |
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|---|---|
| MJD13003 | NPN Transistor |
| MJD42C1G | PNP Transistor |
