Part MJD200
Description NPN Transistor
Category Transistor
Manufacturer Inchange Semiconductor
Size 203.01 KB
Inchange Semiconductor

MJD200 Overview

Description

DC Current Gain- : hFE = 70(Min) @ IC= 0.5A - Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A - Complement to the PNP MJD210 - Minimum Lot-to-Lot variations for robust device performance and reliable operation.