MJD200
MJD200 is NPN Transistor manufactured by Inchange Semiconductor.
isc Silicon NPN Power Transistor
DESCRIPTION
- DC Current Gain-
: hFE = 70(Min) @ IC= 0.5A
- Low Collector Saturation Voltage-
: VCE(sat) = 0.3V(Max.)@ IC= 0.5 A
- plement to the PNP MJD210
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
- Designed for low power audio amplifier and low-current, high-speed switching...
