Datasheet Details
| Part number | MJD200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Datasheet | MJD200-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJD200 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.01 KB |
| Description | NPN Transistor |
| Datasheet | MJD200-INCHANGE.pdf |
|
|
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·DC Current Gain- : hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·plement to the PNP MJD210 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ Ti Junction Temperature 1 A 1.4 W 12.5 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 10 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 89.3 ℃/W MJD200 isc Website：.iscsemi.
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD200 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJD200 | Complementary Plastic Power Transistors | ON |
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MJD200 | D-PAK | Fairchild |
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MJD200 | SILICON POWER TRANSISTORS | Motorola |
| Part Number | Description |
|---|---|
| MJD13003 | NPN Transistor |
| MJD42C1G | PNP Transistor |