MJD200 Datasheet and Specifications PDF

The MJD200 is a Complementary Plastic Power Transistors.

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Part NumberMJD200 Datasheet
Manufactureronsemi
Overview MJD200 (NPN) MJD210 (PNP) Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications Designed for low voltage, low−power, high−gain audio amplifie.
* Collector
*Emitter Sustaining Voltage
*
* High DC Current Gain
* hFE = 70 (Min) @ IC = 500 mAdc
*
*
*
*
*
*
* = 45 (Min) @ IC = 2 Adc = 10 (Min) @ IC = 5 Adc Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Low Collector
*Emitter Saturation Voltage
* VCE(s.
Part NumberMJD200 Datasheet
DescriptionD-PAK
ManufacturerFairchild Semiconductor
Overview MJD200 MJD200 D-PAK for Surface Mount Applications • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, “ - I “ Suf. est Condition IC=100mA, IB=0 VCB=40V, IE=0 VEBO=8V, IC=0 VCE=1V, IC=500mA VCE=1V, IC=2A VCE=2V, IC=5A IC=500mA, IB=50mA IC=2A, IB=200mA IC=5A, IB=1A IC=5A, IB=2A VCE=1V, IC=2A VCE=10V, IC=100mA VCB=10V, IE=0, f=0.1MHz 65 80 70 45 10 180 0.3 0.75 1.8 2.5 1.6 V V V V V MHz pF Min. 25 Max. 100 100 Unit.
Part NumberMJD200 Datasheet
DescriptionSILICON POWER TRANSISTORS
ManufacturerMotorola Semiconductor
Overview MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJD200/D Complementary Plastic Power Transistors NPN/PNP Silicon DPAK For Surface Mount Applications . . . designed for low voltage, lo. ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎ.
Part NumberMJD200 Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·DC Current Gain- : hFE = 70(Min) @ IC= 0.5A ·Low Collector Saturation Voltage- : VCE(sat) = 0.3V(Max.)@ IC= 0.5 A ·Complement to the PNP MJD210 ·Minimum Lot-to-Lot variations for robust device perfor. sc Website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJD200 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 25 V VCE(sat)-1.