Inchange Semiconductor MJE1100
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJE1100 |
|---|---|
| Datasheet | MJE1100 Download |
| Manufacturer |  Inchange Semiconductor |
| Description | NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High DC Current Gain-hFE= 750(Min)@ IC= 3A●Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min)
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Designed for driver and output stages in complementary audio amplifier and general-purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCER Collector-Emitter Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.1 A 70 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.8 ℃/W isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor MJE1100ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdo...