High DC Current Gain-hFE= 750(Min)@ IC= 3A
Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min)
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
Designed for driver and output stages in complementary
audio amplifier and gene
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isc Silicon NPN Darlington Power Transistor
MJE1100
DESCRIPTION ·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for driver and output stages in complementary
audio amplifier and general-purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCER Collector-Emitter Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0.
MJE1100 Datasheet
