Part Number	MJE1100 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·High DC Current Gain-hFE= 750(Min)@ IC= 3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI. L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VBE(on) Base-Emitter On Voltage IC= 3A ; VCE= 3V ICEO Collector Cutoff Current ICBO Co.