Datasheet Details
| Part number | MJE2360T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.41 KB |
| Description | NPN Transistor |
| Datasheet | MJE2360T-INCHANGE.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJE2360T |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.41 KB |
| Description | NPN Transistor |
| Datasheet | MJE2360T-INCHANGE.pdf |
|
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·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) ·DC Current Gain- : hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low power audio amplifier and low-current, high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCEO Collector-Emitter Voltage VCEV Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak IB Base Current Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range VALUE 350 375 6 0.5 1 0.25 0.24 30 -65~150 -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX Rth j-c Thermal Resistance,Junction to Case 4.167 UNIT ℃/W MJE2360T isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.5mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 100mA ;IB=10mA VBE(on) Base-Emitter On Voltage IC= 100mA;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE2360T | NPN Silicon High Voltage Transistor | Motorola |
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