| Part Number | MJE2360T Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 350 V(Min) ·DC Current Gain- : hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage- : VCE(sat) = 1.5V(Max.)@ IC= 100mA ·Minimum Lot-to-Lot v. i.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.5mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 100mA ;. |
MJE2360T Datasheet and Specifications PDF
The MJE2360T is a NPN Transistor.
| Part Number | MJE2360T Datasheet |
|---|---|
| Description | NPN Silicon High Voltage Transistor |
| Manufacturer | Motorola Semiconductor |
| Overview | MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon High-Voltage Transistor . . . useful for general–purpose, high voltage applications requiring high fT. • Collector–Emitter Sustaining Voltage — VCEO. . |