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MJW3281A - NPN Transistor

General Description

High DC current amplifier rate hFE: 50-200@VCE= 5V,IC= 1A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

High power audio, disk head positioners and other linear applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC current amplifier rate hFE: 50-200@VCE= 5V,IC= 1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High power audio, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 230 V VCEO Collector-Emitter Voltage 230 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A ICP Collector Current-Pulse 25 A IB Base Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1.5 A 200 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 0.