MJW3281A - NPN Silicon Power Bipolar Transistors

onsemi

Key Features

Designed for 100 W Audio Frequency.
Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A.
Low Harmonic Distortion.
High Safe Operation Area.
1 A/100 V @ 1 Second.
High fT.
30 MHz Typical.
Pb.
Free Packages are Available.

MJW3281A npn silicon power bipolar transistors by onsemi - Datasheet Preview

Datasheet Details

Part number	MJW3281A
Manufacturer	onsemi
File Size	190.10 KB
Description	NPN Silicon Power Bipolar Transistors
Datasheet	MJW3281A Datasheet

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Complementary NPN-PNP Silicon Power Bipolar Transistors MJW3281A (NPN) MJW1302A (PNP) The MJW3281A and MJW1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Features  Designed for 100 W Audio Frequency  Gain Complementary: Gain Linearity from 100 mA to 7 A hFE = 45 (Min) @ IC = 8 A  Low Harmonic Distortion  High Safe Operation Area − 1 A/100 V @ 1 Second  High fT − 30 MHz Typical  Pb−Free Packages are Available* MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector−Emitter Voltage − 1.5 V Collector Current − Continuous Collector Current − Peak (Note 1) VCEO VCBO VEBO VCEX IC 230 Vdc 230 Vdc 5.