Inchange Semiconductor MP1620
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.DESCRIPTION
●With TO-3PN packaging●Very high DC current gain
●Monolithic darlington transistor with integrated antiparallel collector-emitter diode
●Complement to type MJH6284
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●AC-DC motor control●Electronic ignition
●Alternator regulator
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A IB Base Current -1 A PC Collector Power Dissipation 150 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.78 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W MP1620 isc website: 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL...