Part Number	MP1620 Datasheet
Manufacturer	Inchange Semiconductor
Overview	·With TO-3PN packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Complement to type MJH6284 ·Minimum Lot-to-Lot variations for . Silicon PNP Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= -7A ,IB= -7mA VBE(sat) Base-Emitter Saturation V.