NVD4C05NT4G - N-Channel MOSFET

Inchange Semiconductor

Key Features

With To-252(DPAK) package.
Low input capacitance and gate charge.
Low gate input resistance.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

NVD4C05NT4G n-channel mosfet by Inchange Semiconductor - Datasheet Preview

Datasheet Details

Part number	NVD4C05NT4G
Manufacturer	Inchange Semiconductor
File Size	257.75 KB
Description	N-Channel MOSFET
Datasheet	NVD4C05NT4G Datasheet

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Isc N-Channel MOSFET Transistor NVD4C05NT4G ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 30 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 90 IDM Drain Current-Single Pulsed 395 PD Total Dissipation @TC=25℃ 57 Tch Max. Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 2.