NVD4C05N Description
NVD4C05N MOSFET Power, Single, N-Channel 30 V, 4.1 mW, 90.
NVD4C05N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low QG and Capacitance to Minimize Driver Losses
- AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
- 55 to °C 175
- Steady State (Note 2) RqJA
- Rev. 1