Click to expand full text
NVD4C05N
MOSFET – Power, Single, N-Channel
30 V, 4.1 mW, 90 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
Continuous Drain Current RqJC (Notes 1 & 3)
TC = 25°C
ID
Steady TC = 100°C
Power Dissipation RqJC State TC = 25°C
PD
(Note 1)
TC = 100°C
90
A
64
57
W
28
Continuous Drain Current RqJA (Notes 1, 2 & 3)
TA = 25°C
ID
Steady TA = 100°C
Power Dissipation RqJA State TA = 25°C
PD
(Notes 1 & 2)
TA = 100°C
22
A
16
3.5
W
1.
NVD4C05N Datasheet
