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Q6006DH4 Datasheet Thyristor

Manufacturer: Inchange Semiconductor

Overview: isc Thyristors Q6006DH4.

General Description

·With TO-252( DPAK ) packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RSM) ITSM PG(AV) Repetitive peak off-state voltage Repetitive peak reverse voltage Average on-state current Surge non-repetitive on-state current 50HZ 60HZ Average gate power dissipation ( over any 20 ms period ) Tj Operating junction temperature Tstg Storage temperature MAX UNIT 600 V 600 V 6 A 85 80 A 0.5 W -40~125 ℃ -40~150 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS IRRM Repetitive peak reverse current IDRM Repetitive peak off-state current VR=VRRM Rated;

VD=VDRM Rated;

Tj=25℃ Tj=100℃ Tj=125℃ VTM On-state voltage IT=6A IGT Gate-trigger current Ⅰ VD =12V;IT=0.1A;

Q6006DH4 Distributor