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R6007ENJ Datasheet

Manufacturer: Inchange Semiconductor
R6007ENJ datasheet preview

R6007ENJ Details

Part number R6007ENJ
Datasheet R6007ENJ-INCHANGE.pdf
File Size 250.44 KB
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
R6007ENJ page 2

R6007ENJ Overview

·Designed for use in switch mode power supplies and general purpose applications. RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 78 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...

R6007ENJ Key Features

  • Drain Current -ID= 7A@ TC=25℃ -Drain Source Voltage

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