Inchange Semiconductor R6007ENX
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | R6007ENX |
|---|---|
| Datasheet | R6007ENX Download |
| Manufacturer |  Inchange Semiconductor |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Drain Current –ID= 7A@ TC=25℃●Drain Source Voltage- : VDSS=600V(Min)
●Static Drain-Source On-Resistance : RDS(on) = 620mΩ(Max)
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
DESCRIPTION
●Designed for use in switch mode power supplies and general purpose applications.ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 7 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 46 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 2.7 ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor R6007ENXELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA...