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R6007ENX - N-Channel MOSFET

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INCHANGE

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R6007ENX N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – R6007ENX

Datasheet Details

Part number	R6007ENX
Manufacturer	INCHANGE
File Size	247.13 KB
Description	N-Channel MOSFET
Datasheet	R6007ENX Datasheet
Additional preview pages of the R6007ENX datasheet.

R6007ENX Product details

Description

purpose applications.

Features

Drain Current.
ID= 7A@ TC=25℃.
Drain Source Voltage- : VDSS=600V(Min).
Static Drain-Source On-Resistance : RDS(on) = 620mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 1, 2021 |