ROHM Semiconductor R6007ENX
Power MOSFET
| Part No. | R6007ENX |
|---|---|
| Datasheet | R6007ENX Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6007ENX Nch 600V 7A Power MOSFET Datasheet lOutline VDSS 600V RDS(on)(Max.) 0.62Ω ID ±7A TO-220FM PD 46W lInner circuit lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Tape width (mm) - Type Quantity (pcs) 500 Taping code - Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6007ENX Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage TC = 25°C TC = 100°C static AC(f＞1Hz) VDSS ID*1 ID*1 IDP*2 VGSS 600 V ±7 A ±3.8 A ±14 A ±20 V ±30 V Avalanche current, repetitive IAR 1.3 A Avalanche energy, single pulse EAS*3 133 mJ Avalanche energy, repetitive EAR*3 0.2 mJ Power dissipation (TC = 25°C) PD*4 46 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ © 2019 ROHM Co., Ltd.
