Download R6035ENZ Datasheet PDF
Inchange Semiconductor
R6035ENZ
FEATURES - Drain Current - ID= 35A@ TC=25℃ - Drain Source Voltage- : VDSS= 600V(Min) - Static Drain-Source On-Resistance : RDS(on) = 102mΩ(Max) - 100% avalanche tested - Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION - Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage Gate-Source Voltage-Continuous ±20 Drain Current-Continuous Drain Current-Single Pluse Total Dissipation @TC=25℃ Max. Operating Junction Temperature ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL...