ROHM Semiconductor R6035ENZ
Power MOSFET
- Max Operating Temp : 150°C
- Min Operating Temp : -55°C
Source:
Octopart
| Part No. | R6035ENZ |
|---|---|
| Datasheet | R6035ENZ Download |
| Manufacturer |  ROHM Semiconductor |
| Description | Power MOSFET |
| Buy | Stock & Price |
R6035ENZ Nch 600V 35A Power MOSFET Datasheet VDSS 600V lOutline RDS(on)(Max.) 0.102Ω ID ±35A TO-3PF PD 120W lFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±20V. 4) Drive circuits can be simple. 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lInner circuit lPackaging specifications Packing Tube Reel size (mm) - lApplication Switching Tape width (mm) Type Quantity (pcs) 300 Taping code C17 Marking lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value R6035ENZ Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage TC = 25°C TC = 100°C static AC(f＞1Hz) VDSS ID*1 ID*1 IDP*2 VGSS 600 ±35 ±19 ±105 ±20 ±30 V A A A V V Avalanche current, repetitive IAR 6.6 A Avalanche energy, single pulse EAS*3 796 mJ Avalanche energy, repetitive EAR*3 1.2 mJ Power dissipation (TC = 25°C) PD*4 120 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55～+150 ℃ © 2019 ROHM Co., Ltd.
