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R6509ENJ - N-Channel MOSFET

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INCHANGE

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R6509ENJ N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – R6509ENJ

Datasheet Details

Part number	R6509ENJ
Manufacturer	INCHANGE
File Size	250.88 KB
Description	N-Channel MOSFET
Datasheet	R6509ENJ Datasheet
Additional preview pages of the R6509ENJ datasheet.

R6509ENJ Product details

Description

purpose applications.

Features

Drain Current.
ID= 9A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Mar 1, 2021 |