Full PDF Text Transcription for R6509ENX (Reference)
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R6509ENX Nch 650V 9A Power MOSFET Datasheet lOutline VDSS 650V RDS(on)(Max.) 0.585Ω ID ±9A TO-220FM PD 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel us...
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PD 48W lFeatures 1) Low on-resistance 2) Fast switching 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 650 V ±9 A ±27 A Gate - Source voltage static AC(f＞1Hz) VGSS ±20 V ±30 V Avalanche current, single pulse Avalanche energy, single pulse Power dissipation (Tc = 25°C) IAS EAS*3 PD 1.
R6509ENX Datasheet
