Datasheet4U.com

R6509KNJ - N-Channel MOSFET

Product Overview

INCHANGE

📥 Download Datasheet

R6509KNJ N-Channel MOSFET by INCHANGE - Datasheet Preview — Datasheet preview – R6509KNJ

Datasheet Details

Part number	R6509KNJ
Manufacturer	INCHANGE
File Size	251.17 KB
Description	N-Channel MOSFET
Datasheet	R6509KNJ Datasheet
Additional preview pages of the R6509KNJ datasheet.

R6509KNJ Product details

Description

purpose applications.

Features

Drain Current.
ID= 9A@ TC=25℃.
Drain Source Voltage- : VDSS=650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📁 Similar Datasheet

R6509KNJ - Power MOSFET (ROHM)
R6509KND3 - Nch 650V 9A Power MOSFET (ROHM)
R6509KNX - Power MOSFET (ROHM)
R6509ENJ - Power MOSFET (ROHM)
R6509ENX - Power MOSFET (ROHM)
R6500 - Microcomputer Hardware Manual (Rockwell)
R6500-1 - One-Chip Microcomputer (Rockwell)
R6500-11 - One-Chip Microcomputers (Rockwell)
R6500-12 - One-Chip Microcomputers (Rockwell)
R6500-13 - One-Chip Microprocessor (Rockwell)

Other Datasheets by INCHANGE

R6509KNX - N-Channel MOSFET
R6509ENJ - N-Channel MOSFET
R6509ENX - N-Channel MOSFET
R6504ENJ - N-Channel MOSFET
R6504ENX - N-Channel MOSFET
R6504KNJ - N-Channel MOSFET
R6504KNX - N-Channel MOSFET
R6507ENJ - N-Channel MOSFET

Published: Mar 1, 2021 |