RBQ30TB45BNZ - Schottky Barrier Rectifier

Features

Low Forward Voltage.
Power Mold Type.
High reliability.
Low Stored Charge Majority Carrier Conduction.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	RBQ30TB45BNZ
Manufacturer	INCHANGE
File Size	171.83 KB
Description	Schottky Barrier Rectifier
Datasheet	RBQ30TB45BNZ Datasheet
Additional preview pages of the RBQ30TB45BNZ datasheet.

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Full PDF Text Transcription

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Schottky Barrier Rectifier INCHANGE Semiconductor RBQ30TB45BNZ FEATURES ·Low Forward Voltage ·Power Mold Type ·High reliability ·Low Stored Charge Majority Carrier Conduction ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Switching power supply ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VRRM VRMS VR IF(AV) Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC= 100℃ IFSM Nonrepetitive Peak Surge Current 60Hz half sin Wave 1cycle VALUE UNIT 45 V 30 A 100 A TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~175 ℃ isc website：www.

Published: Sep 14, 2020 |