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RBQ30TB45BNZ - Schottky Barrier Diode

Features

  • 1) Power Mold Type 2) High reliability 3) Low IR lConstruction Silicon epitaxial planar type 5.0±0.2 8.0 1.6 MAX ① 14.0±0.5 1.2 1.3 0.8 (1) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN (2 pin) 2.6±0.5 0.75±00..015 1 Manufacture date (1) Cathode lPackage Dimensions (Unit : mm) 7 540 (3) Anode 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io I.

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Datasheet Details

Part number RBQ30TB45BNZ
Manufacturer ROHM
File Size 647.70 KB
Description Schottky Barrier Diode
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Schottky Barrier Diode RBQ30TB45BNZ lApplication Switching power supply lDimensions (Unit : mm) 10.0±00..31 φ3.2±0.2 4.5±00..31 2.8±00..21 Data Sheet lStructure 0.4 0.2 15.0± 12.0±0.2 lFeatures 1) Power Mold Type 2) High reliability 3) Low IR lConstruction Silicon epitaxial planar type 5.0±0.2 8.0 1.6 MAX ① 14.0±0.5 1.2 1.3 0.8 (1) (3) 2.45±0.5 2.45±0.5 ROHM : TO-220FN (2 pin) 2.6±0.5 0.75±00..015 1 Manufacture date (1) Cathode lPackage Dimensions (Unit : mm) 7 540 (3) Anode 34.5 lAbsolute Maximum Ratings (Tc= 25°C) Parameter Symbol Repetitive peak reverse voltage Reverse voltage Average forward rectified current Non-repetitive forward current surge peak VRM VR Io IFSM Operating junction temperature Storage temperature Tj Tstg Conditions Duty≦0.
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