Datasheet Details
| Part number | RCJ120N25 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.16 KB |
| Description | N-Channel MOSFET |
| Download | RCJ120N25 Download (PDF) |
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| Part number | RCJ120N25 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 250.16 KB |
| Description | N-Channel MOSFET |
| Download | RCJ120N25 Download (PDF) |
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·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 250 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Pluse 48 A PD Total Dissipation @TC=25℃ 107 W TJ Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.16 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor RCJ120N25 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
isc N-Channel MOSFET Transistor RCJ120N25.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
RCJ120N25 | Power MOSFET | ROHM |
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