RD3T100CN - N-Channel MOSFET

Datasheet Summary

Description

purpose applications.

Features

Drain Current.
ID= 10A@ TC=25℃.
Drain Source Voltage- : VDSS= 200V(Min).
Static Drain-Source On-Resistance : RDS(on) = 182mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

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Datasheet Details

Part number	RD3T100CN
Manufacturer	INCHANGE
File Size	260.79 KB
Description	N-Channel MOSFET
Datasheet	RD3T100CN Datasheet
Additional preview pages of the RD3T100CN datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor RD3T100CN FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 182mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 10 A IDM Drain Current-Single Pluse 40 A PD Total Dissipation @TC=25℃ 85 W TJ Max.

Published: Mar 15, 2021 |