RD3T100CN
RD3T100CN is Power MOSFET manufactured by ROHM.
Nch 200V 10A Power MOSFET
Datasheet l Outline
VDSS
200V
RDS(on)(Max.)
182mΩ
DPAK
±10A
TO-252
85W l Features 1) Low on-resistance 2) Fast switching speed 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; Ro HS pliant
l Inner circuit l Packaging specifications Packing
Reel size (mm) l Application Switching Power Supply
Type Tape width (mm) Quantity (pcs)
Taping code
Marking l Absolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Drain
- Source voltage
Continuous drain current
Tc = 25°C Tc = 100°C
Pulsed drain current
Gate
- Source voltage
Avalanche energy, single pulse
Avalanche current, single pulse
Power dissipation (Tc = 25°C)
Junction temperature
Operating junction and storage temperature range
VDSS ID- 1 ID- 1 IDP- 2 VGSS EAS- 3 IAS- 3 PD Tj Tstg
200 ±10 ±5.4 ±40 ±30 7.35 5 85 150 -55 to +150
Embossed Tape 330 16 2500 TL1
Unit V A A A V m J A...
