SPA11N60C3E8185 Description
·Ultra low gate charge ·High peak current capability ·Improved transconductance · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. ID =0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.5mA 2.1 3.9 V RDS(on) Drain-Source On-Resistance VGS=10V;.
SPA11N60C3E8185 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Ultra low gate charge -High peak current capability -Improved transconductance