SPA11N60C3E8185 Overview
Description
Ultra low gate charge - High peak current capability - Improved transconductance - SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 33 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ - SYMBOL PARAMETER Rth(ch-c) Channel-to-case Rth(ch-a) Channel-to-ambient MAX 1 62 UNIT ℃/W ℃/W isc website： 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER SPA11N60C3E8185，SPA11N60C3E8185 CONDITIONS MIN TYP MAX UNIT BVDSS Drain-Source Breakdown Voltage VGS=0V; ID =0.25mA 600 V VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.5mA 2.1 3.9 V RDS(on) Drain-Source On-Resistance VGS=10V; ID=7A 0.38 Ω IGSS Gate-Source Leakage Current VGS=30V; VDS=0V 0.1 μA IDSS Drain-Source Leakage Current VDS=600V; VGS= 0V 1 μA VSD Diode forward voltage IF=IS; VGS = 0V 1.2 V NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
Key Features
- Static drain-source on-resistance: RDS(on) ≤0.38Ω
- Enhancement mode
- Fast Switching Speed
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
