SPA11N60C3E8185 Datasheet and Specifications PDF

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanch.

* New revolutionary high voltage technology
* Ultra low gate charge VDS @ Tjmax RDS(on) ID
* Periodic avalanche rated PG-TO220FP PG-TO262
* Extreme dv/dt rated
* High peak current capability
* Improved transconductance 23 1 P-TO220-3-31
* PG-TO-220-3-31;-3-111: Fully isolated package (2500 VA.

·Ultra low gate charge ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage .

*Static drain-source on-resistance: RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Ultra low gate charge
*High peak current capability
*Improved transconductance
*ABSOLU.