Inchange Semiconductor SPD15P10PL
P-Channel MOSFET
| Part No. | SPD15P10PL |
|---|---|
| Datasheet | SPD15P10PL Download |
| Manufacturer |  Inchange Semiconductor |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A)●Advanced trench process technology
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Fast switching application.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -100 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -15 A PD Total Dissipation @TC=25℃ 128 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.17 ℃/W SPD15P10PL isc website： 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -1.54mA RDS(on) Drain-Source On-Resistance VGS= -4.5V; ID= -9.7A...