Infineon Technologies SPD15P10PL
Power Transistor
FEATURES
● P-Channel● Enhancement mode
● logic level
● Avalanche rated
● Pb-free lead plating; RoHS compliant
● Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 : V GS P tot T C=25 °C T j, T stg ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 Value Unit -15 A 11.3 -60 230 mJ ±20 V 128 W -55 ... 175 °C 1C (1kV to 2kV) 260 °C 55/175/56 Rev 1.5 page 1 2012-09-03 Parameter Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient Symbol Conditions SPD15P10PL G min. Values typ. Unit max.