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SPD15P10PL - Power Transistor

Download the SPD15P10PL datasheet PDF. This datasheet also covers the SPD15P10PLG variant, as both devices belong to the same power transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • P-Channel.
  • Enhancement mode.
  • logic level.
  • Avalanche rated.
  • Pb-free lead plating; RoHS compliant.
  • Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SPD15P10PLG-InfineonTechnologies.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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SPD15P10PG Small-Signal-Transistor Infineon Technologies
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Other Datasheets by Infineon

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant  Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPD15P10PL G -100 V 0.20 : -15 A PG-TO252-3 Type Package SPD15P10PL G PG-TO252-3 Marking 15P10PL Lead free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ID T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS I D=-15 A, R GS=25 : V GS P tot T C=25 °C T j, T stg ESD Class Soldering temperature IEC climatic category; DIN IEC 68-1 Value Unit -15 A 11.