SPD15P10PL Datasheet
SPD15P10PL Datasheet (Inchange Semiconductor)
Inchange Semiconductor
isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot vari.
*Static drain-source on-resistance:
RDS(on)≤270mΩ(@VGS= -4.5V; ID= -9.7A)
*Advanced trench process technology
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
*APPLICATIONS
*Fast switching application.
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMB.
SPD15P10PL Datasheet (Infineon)
Infineon
SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • logic level • Avalanche rated • Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Product Summary V DS R DS(on).
* P-Channel
* Enhancement mode
* logic level
* Avalanche rated
* Pb-free lead plating; RoHS compliant
* Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPD15P10PL G
-100 V 0.20 : -15 A
PG-TO252-3
Type
Package
SPD15P10PL G PG-TO252-3
Marking 15P10PL
Lead free Packing
Yes.