SPD30P06P Overview
Key Features
- Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)
- Advanced trench process technology
- 100% avalanche tested
- Minimum Lot-to-Lot variations for robust device performance and reliable operation
| Part | SPD30P06P |
|---|---|
| Description | P-Channel MOSFET |
| Category | MOSFET |
| Manufacturer | Inchange Semiconductor |
| Size | 259.94 KB |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SPD30P06P | Infineon | Power Transistor |
| SPD30P06PG | VBsemi | P-Channel MOSFET |
| SPD30P06PG | Infineon | Power Transistor |