Inchange Semiconductor SPD30P06P
P-Channel MOSFET
| Part No. | SPD30P06P |
|---|---|
| Datasheet | SPD30P06P Download |
| Manufacturer |  Inchange Semiconductor |
| Description | P-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
●Static drain-source on-resistance: RDS(on)≤75mΩ(@VGS= -10V; ID= -21.5A)●Advanced trench process technology
●100% avalanche tested
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
●
APPLICATIONS
●Fast switching application.●
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage -60 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous -30 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature -55~175 ℃●THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 1.2 ℃/W SPD30P06P isc website： 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250uA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -1.7mA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -21.5A IGSS...