Infineon Technologies SPD30P06P
Power Transistor
| Part No. | SPD30P06P |
|---|---|
| Datasheet | SPD30P06P Download |
| Manufacturer |  Infineon Technologies |
| Description | Power Transistor |
| Buy | Stock & Price |
FEATURES
Product Summary● P-Channel
● Enhancement mode
● Avalanche rated
● dv/dt rated Drain source voltage VDS -60 V W Drain-source on-state resistance RDS(on) 0.075 Continuous drain current ID -30 A
● 175°C operating temperature ° Pb-free lead plating; RoHS compliat ° Qualified according to AEC Q101 Type SPD30P06P G Package PG-TO252-3
MAXIMUM RATINGS
,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current TC = 25 °C Avalanche energy, single pulse W ID = -30 A , VDD = -25 V, RGS = 25 Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = -30 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg Pin 1 PIN 2/4 PIN 3 G D S Value -30 -21.5 -120 250 12.5 6 Unit A mJ kV/µs ±20 V 125 W -55...+175 °C 55/175/56 Rev 2.3 Page 1 2008-09-02 SPD30P06P G Ther...
