Datasheet4U Logo Datasheet4U.com

SPI11N60CFD - N-Channel MOSFET

General Description

Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 T

Key Features

  • Static drain-source on-resistance: RDS(on) ≤0.44Ω.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SPI11N60CFD Power-Transistor Infineon Technologies
SPI11N60C3 Power Transistor Infineon Technologies
SPI11N60S5 Power Transistor Infineon Technologies
SPI11N65C3 Power Transistor Infineon Technologies
SPI100N03S2-03 OptiMOS Power-Transistor Infineon Technologies

Other Datasheets by Inchange Semiconductor

Part Number Description
SPI11N60C3 N-Channel MOSFET
SPI11N60S5 N-Channel MOSFET
SPI11N65C3 N-Channel MOSFET
SPI12N50C3 N-Channel MOSFET
SPI15N60C3 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.44Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11 IDM Drain Current-Single Pulsed 28 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 1 UNIT ℃/W SPI11N60CFD isc website：www.iscsemi.