The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge
VDS @ Tjmax RDS(on) ID
• Periodic avalanche rated
PG-TO220FP PG-TO262
• Extreme dv/dt rated
• High peak current capability • Improved transconductance
23 1 P-TO220-3-31
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
650 V 0.
SPI11N60C3 Datasheet
