SPI15N65C3 Overview
·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use · RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 65 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 45 A PD Total Dissipation @TC=25℃ 156 W Tj Max. ID =0.25mA VGS(th) Gate Threshold Voltage VDS=VGS; ID =0.675mA RDS(on) Drain-Source On-Resistance VGS=10V;.
SPI15N65C3 Key Features
- Static drain-source on-resistance
- DESCRIPTION -Provide all benefits of a fast switching SJ MOSFET while not
