SPI15N65C3 Datasheet and Specifications PDF

SPI15N65C3 CoolMOSTM Power Transistor Features • Low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; .

* Low gate charge
* Extreme dv/dt rated
* High peak current capability
* Qualified according to JEDEC1) for target applications
* Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max Q g,typ 650 0.28 63 V Ω nC TO-262-3-1 CoolMOS C3 designed for:
* Notebook Adapter Type SPI15N65C.

·Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 65 V VGS Gate-S.

*Static drain-source on-resistance: RDS(on) ≤0.38Ω
*Enhancement mode
*Fast Switching Speed
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*DESCRIPTION
*Provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use
*A.